onsemi · FETs & Power MOSFETs · MPN NVMTS0D7N06CLTXG
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| Gate Charge(Qg) | 225nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 477A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 294.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF |
| RDS(on) | 0.68mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
60V 477A 1V 294.6W 0.68mΩ@10V 1 N-channel DFNW-8(8.4x8.3) Single FETs, MOSFETs RoHS