onsemi · FETs & Power MOSFETs · MPN NVMTS0D7N04CTXG
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| Gate Charge(Qg) | 140nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 420A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 205W |
| Reverse Transfer Capacitance (Crss@Vds) | 176pF |
| RDS(on) | 0.67mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.281nF |
40V 420A 2V 205W 0.67mΩ@10V 1 N-channel DFNW-8(8.4x8.3) Single FETs, MOSFETs RoHS