onsemi · FETs & Power MOSFETs · MPN NVMTS0D4N04CLTXG
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| Gate Charge(Qg) | 163nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 553.8A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 244W |
| Reverse Transfer Capacitance (Crss@Vds) | 390pF |
| RDS(on) | 0.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 20.6nF |
40V 553.8A 2.5V 244W 0.4mΩ@10V 1 N-channel PowerTDFN-8(7.9x8) Single FETs, MOSFETs RoHS