onsemi NVMTS001N06CTXG

onsemi · FETs & Power MOSFETs · MPN NVMTS001N06CTXG

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Specifications

Gate Charge(Qg)119nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)6.69nF
Current - Continuous Drain(Id)376A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation244W
Reverse Transfer Capacitance (Crss@Vds)107pF
RDS(on)0.91mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.705nF
TypeN-Channel

Technical details

N-Channel 60V 376A 244W Surface Mount DFNW-8(8.4x8.3)

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