onsemi · FETs & Power MOSFETs · MPN NVMJST2D6N08HTXG
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| Gate Charge(Qg) | 68nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 131.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 2.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.405nF |
80V 131.5A 2V 2.8mΩ@10V 1 N-channel LFPAK-10(7.5x5) Single FETs, MOSFETs RoHS