onsemi · FETs & Power MOSFETs · MPN NVMJST0D9N04CTXG
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| Gate Charge(Qg) | 86nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 531A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 555W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 1.07mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.1nF |
40V 531A 2.5V 555W 1.07mΩ@10V 1 N-channel LFPAK-10(7.5x5) Single FETs, MOSFETs RoHS