onsemi · FETs & Power MOSFETs · MPN NVMJS1D7N04CTWG
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| Gate Charge(Qg) | 47nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 35A;185A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 3.8W;106W |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.3nF |
40V 3.5V 1.7mΩ@10V 1 N-channel LFPAK-8 Single FETs, MOSFETs RoHS