onsemi NVMJS1D5N04CLTWG

onsemi · FETs & Power MOSFETs · MPN NVMJS1D5N04CLTWG

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Specifications

Output Capacitance(Coss)1.9nF
Pd - Power Dissipation110W
Configuration-
Gate Charge(Qg)70nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)1.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.3nF

Technical details

110W 40V 38A 2V 1.4mΩ@10V 1 N-channel N-Channel LFPAK-8 Single FETs, MOSFETs RoHS

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