onsemi · FETs & Power MOSFETs · MPN NVMJS1D4N06CLTWG
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 103nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 3.5nF |
| Current - Continuous Drain(Id) | 262A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 180W |
| Reverse Transfer Capacitance (Crss@Vds) | 57pF |
| RDS(on) | 1.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.43nF |
60V 262A 2V 180W 1.3mΩ@10V 1 N-channel N-Channel LFPAK-8 Single FETs, MOSFETs RoHS