onsemi · FETs & Power MOSFETs · MPN NVMJS0D9N04CTWG
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| Gate Charge(Qg) | 117nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 52A;342A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 4.2W;180W |
| RDS(on) | 0.81mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.4nF |
40V 4V 0.81mΩ@10V 1 N-channel LFPAK-8 Single FETs, MOSFETs RoHS