onsemi · FETs & Power MOSFETs · MPN NVMJD3D0N04CTWG
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| Current - Continuous Drain(Id) | 129A |
|---|---|
| RDS(on) | 2.9mΩ@10V |
| Pd - Power Dissipation | 44.3W |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF |
| Input Capacitance(Ciss) | 2.54nF |
| Gate Charge(Qg) | 40nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 1.39nF |
129A 2.9mΩ@10V 44.3W 3.5V FET, MOSFET Arrays RoHS