onsemi NVMJD3D0N04CTWG

onsemi · FETs & Power MOSFETs · MPN NVMJD3D0N04CTWG

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Specifications

Current - Continuous Drain(Id)129A
RDS(on)2.9mΩ@10V
Pd - Power Dissipation44.3W
Gate Threshold Voltage (Vgs(th))3.5V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)52pF
Input Capacitance(Ciss)2.54nF
Gate Charge(Qg)40nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)1.39nF

Technical details

129A 2.9mΩ@10V 44.3W 3.5V FET, MOSFET Arrays RoHS

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