onsemi · FETs & Power MOSFETs · MPN NVMJD2D7N04CLTWG
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| Current - Continuous Drain(Id) | 121A |
|---|---|
| RDS(on) | 2.65mΩ@10V |
| Pd - Power Dissipation | 3.2W |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| Input Capacitance(Ciss) | 3.3nF |
| Gate Charge(Qg) | 57.3nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 1.395nF |
121A 2.65mΩ@10V 3.2W 2.2V FET, MOSFET Arrays RoHS