onsemi · FETs & Power MOSFETs · MPN NVMFWS3D6N10MCLT1G
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| Gate Charge(Qg) | 29nC@4.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 132A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 139W |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.411nF |
100V 132A 139W 3mΩ@10V 1 N-channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS