onsemi · FETs & Power MOSFETs · MPN NVMFWS2D1N08XT1G
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| Output Capacitance(Coss) | 1.1nF |
|---|---|
| Pd - Power Dissipation | 148W |
| Configuration | - |
| Drain to Source Voltage | 80V |
| Gate Charge(Qg) | 53nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| RDS(on) | 1.9mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.8nF |
148W 80V 3.6V 1.9mΩ@10V 1 N-channel N-Channel SO-5FL Single FETs, MOSFETs RoHS