onsemi · FETs & Power MOSFETs · MPN NVMFWS1D1N04XMT1G
No reviews yet — be the first to review onsemi NVMFWS1D1N04XMT1G.
| Output Capacitance(Coss) | 2.015nF |
|---|---|
| Pd - Power Dissipation | 104W |
| Configuration | - |
| Drain to Source Voltage | 40V |
| Gate Charge(Qg) | 49.3nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 29.4pF |
| RDS(on) | 0.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.138nF |
104W 40V 2.5V 0.9mΩ@10V 1 N-channel N-Channel SO-8FL Single FETs, MOSFETs RoHS