onsemi NVMFWS0D9N04XMT1G

onsemi · FETs & Power MOSFETs · MPN NVMFWS0D9N04XMT1G

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Specifications

Gate Charge(Qg)61.3nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)273A
Output Capacitance(Coss)2.5nF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation121W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)0.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.696nF
TypeN-Channel

Technical details

N-Channel 40V 273A 121W Surface Mount SO-8FL

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