onsemi · FETs & Power MOSFETs · MPN NVMFWS0D7N04XMT1G
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| Gate Charge(Qg) | 71.6nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 323A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 134W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 0.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.595nF |
40V 323A 3V 134W 0.7mΩ@10V 1 N-channel DFNW-5(5x6)(SO-8-FL) Single FETs, MOSFETs RoHS