onsemi · FETs & Power MOSFETs · MPN NVMFWS0D5N04XMT1G
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| Gate Charge(Qg) | 97.9nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 414A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 53.9pF |
| RDS(on) | 0.52mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.232nF |
40V 414A 3V 0.52mΩ@10V 1 N-channel DFNW-5(5x6)(SO-8-FL) Single FETs, MOSFETs RoHS