onsemi · FETs & Power MOSFETs · MPN NVMFWS016N06CT1G
No reviews yet — be the first to review onsemi NVMFWS016N06CT1G.
| Gate Charge(Qg) | 6.9nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 10A;33A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.4W;36W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.7pF |
| RDS(on) | 13mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 489pF |
60V 4V 13mΩ@10V 1 N-channel DFN-5(5x6) Single FETs, MOSFETs RoHS