onsemi · FETs & Power MOSFETs · MPN NVMFWS014P04M8LT1G
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| Gate Charge(Qg) | 26.5nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 682pF |
| Current - Continuous Drain(Id) | 52.1A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 3.6W;60W |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| RDS(on) | 19.7mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.734nF |
| Type | P-Channel |
40V 52.1A 2.4V 19.7mΩ@4.5V 1 P-Channel P-Channel DFN-5(5x6)(SO-8FL) Single FETs, MOSFETs RoHS