onsemi · FETs & Power MOSFETs · MPN NVMFWS003N10MCT1G
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| Gate Charge(Qg) | 62nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 169A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 194W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 3.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.65nF |
100V 169A 4V 194W 3.1mΩ@10V 1 N-channel DFNW-5(5x6)(SO-8-FL) Single FETs, MOSFETs RoHS