onsemi · FETs & Power MOSFETs · MPN NVMFWD030N06CT1G
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| Current - Continuous Drain(Id) | 19A |
|---|---|
| RDS(on) | 24.7mΩ@10V |
| Pd - Power Dissipation | 23W |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 60V |
| Reverse Transfer Capacitance (Crss@Vds) | 4.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 255pF |
| Gate Charge(Qg) | 4.7nC@10V |
| Operating Temperature | -55℃~+175℃ |
19A 24.7mΩ@10V 23W 4V 1 N-channel SO-8-FL-5.9mm FET, MOSFET Arrays RoHS