onsemi · FETs & Power MOSFETs · MPN NVMFSW6D1N08HT1G
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| Gate Charge(Qg) | 10nC@6V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 89A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.085nF |
80V 89A 4V 104W 4.5mΩ@10V 1 N-channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS