onsemi NVMFS6H864NT1G

onsemi · FETs & Power MOSFETs · MPN NVMFS6H864NT1G

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Specifications

Gate Charge(Qg)6.9nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)23A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)3.7pF
RDS(on)26.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)370pF

Technical details

N-Channel 80V 23A Surface Mount SO-8FL

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