onsemi · FETs & Power MOSFETs · MPN NVMFS6H858NT1G
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| Gate Charge(Qg) | 8.9nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 42W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.7pF |
| RDS(on) | 16.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 510pF |
80V 29A 4V 42W 16.9mΩ@10V 1 N-channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS