onsemi · FETs & Power MOSFETs · MPN NVMFS6H836NT3G
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Output Capacitance(Coss) | 230pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 89W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 6.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.64nF |
| Type | N-Channel |
80V 80A 4V 89W 6.7mΩ@10V 1 N-channel N-Channel DFN-5(5x6)(SO-8FL) Single FETs, MOSFETs RoHS