onsemi · FETs & Power MOSFETs · MPN NVMFS6H836NLT1G
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| Gate Charge(Qg) | 16nC@4.5V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 77A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 89W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 5.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.95nF |
80V 77A 2V 89W 5.1mΩ@10V 1 N-channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS