onsemi · FETs & Power MOSFETs · MPN NVMFS6H818NWFT1G
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| Gate Charge(Qg) | 46nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 123A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 3.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.1nF |
N-Channel 80V 123A Surface Mount DFN-5(5.9x4.9)