onsemi NVMFS6H800NT1G

onsemi · FETs & Power MOSFETs · MPN NVMFS6H800NT1G

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Specifications

Gate Charge(Qg)85nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)203A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)2.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.53nF

Technical details

N-Channel 80V 203A Surface Mount SO-8FL

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