onsemi NVMFS6H800NLT1G

onsemi · FETs & Power MOSFETs · MPN NVMFS6H800NLT1G

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Specifications

Gate Charge(Qg)112nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)800pF
Current - Continuous Drain(Id)224A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation214W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)1.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.9nF
TypeN-Channel

Technical details

N-Channel 80V 224A 214W Surface Mount SO-8FL

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