onsemi NVMFS6B75NLT1G

onsemi · FETs & Power MOSFETs · MPN NVMFS6B75NLT1G

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Specifications

Gate Charge(Qg)5.4nC@4.5V
Drain to Source Voltage100V
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation56W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)24.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)740pF

Technical details

100V 28A 3V 56W 24.7mΩ@10V 1 N-channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS

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