onsemi NVMFS6B14NT1G

onsemi · FETs & Power MOSFETs · MPN NVMFS6B14NT1G

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)260pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation47W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)15mΩ@10V
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

100V 55A 4V 47W 15mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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