onsemi · FETs & Power MOSFETs · MPN NVMFS6B05NLWFT3G
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| Gate Charge(Qg) | 52.5nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.37nF |
| Current - Continuous Drain(Id) | 114A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 165W |
| Reverse Transfer Capacitance (Crss@Vds) | 89pF |
| RDS(on) | 8.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.98nF |
| Type | N-Channel |
100V 114A 3V 165W 8.2mΩ@4.5V 1 N-channel N-Channel DFN-5(5x6)(SO-8FL) Single FETs, MOSFETs RoHS