onsemi · FETs & Power MOSFETs · MPN NVMFS5C646NLAFT3G
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 33.7nC@10V |
| Current - Continuous Drain(Id) | 20A;93A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.7W;79W |
| RDS(on) | 4.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.164nF |
60V 2V 4.7mΩ@10V 1 N-channel DFN-5(5x6) Single FETs, MOSFETs RoHS