onsemi · FETs & Power MOSFETs · MPN NVMFS5C645NLAFT1G
No reviews yet — be the first to review onsemi NVMFS5C645NLAFT1G.
| Gate Charge(Qg) | 16nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 79W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 3.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.2nF |
60V 100A 2V 79W 3.3mΩ@10V 1 N-channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS