onsemi NVMFS5C638NLT1G

onsemi · FETs & Power MOSFETs · MPN NVMFS5C638NLT1G

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Specifications

Gate Charge(Qg)40.7nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)133A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.88nF

Technical details

N-Channel 60V 133A 100W Surface Mount SO-8FL

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