onsemi · FETs & Power MOSFETs · MPN NVMFS5826NLT1G
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| Gate Charge(Qg) | 9.1nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 18mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 850pF |
60V 8A 2.5V 3.6W 18mΩ@10V 1 N-channel SO-8-FL-5.8mm Single FETs, MOSFETs RoHS