onsemi · FETs & Power MOSFETs · MPN NVMFS4C302NT1G
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| Gate Charge(Qg) | 37nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 241A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 0.95mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.78nF |
30V 241A 2.2V 115W 0.95mΩ@10V 1 N-channel SO-8-FL-5.8mm Single FETs, MOSFETs RoHS