onsemi NVMFS4C05NT1G

onsemi · FETs & Power MOSFETs · MPN NVMFS4C05NT1G

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)127A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation3.61W;79W
Reverse Transfer Capacitance (Crss@Vds)59pF
RDS(on)2.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.972nF

Technical details

N-Channel 30V 3.61W 79W Surface Mount SO-8FL

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