onsemi · FETs & Power MOSFETs · MPN NVMFS4C01NT3G
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 139nC@10V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 3.84W;161W |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.144nF |
30V 2.2V 1 N-channel DFN-5(5x6) Single FETs, MOSFETs RoHS