onsemi NVMFS3D6N10MCLT1G

onsemi · FETs & Power MOSFETs · MPN NVMFS3D6N10MCLT1G

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Specifications

Gate Charge(Qg)29nC@4.5V
Drain to Source Voltage100V
Current - Continuous Drain(Id)132A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation139W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)3.6mΩ
Number1 N-channel
Input Capacitance(Ciss)4.411nF

Technical details

N-Channel 100V 132A 139W Surface Mount DFN-5(5.9x4.9)

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