onsemi NVMFS040N10MCLT1G

onsemi · FETs & Power MOSFETs · MPN NVMFS040N10MCLT1G

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Specifications

Gate Charge(Qg)8.3nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)6.5A;21A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.5W;36W
Reverse Transfer Capacitance (Crss@Vds)3.7pF
RDS(on)38mΩ
Number1 N-channel
Input Capacitance(Ciss)500pF
TypeN-Channel

Technical details

N-Channel 100V 6.5A 21A 3.5W 36W Surface Mount SO-8FL

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