onsemi NVMFS025P04M8LT1G

onsemi · FETs & Power MOSFETs · MPN NVMFS025P04M8LT1G

No reviews yet — be the first to review onsemi NVMFS025P04M8LT1G.

Specifications

Gate Charge(Qg)7.56nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)34.6A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation44.1W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)23mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.058nF

Technical details

40V 34.6A 2.4V 44.1W 23mΩ@10V 1 P-Channel DFN-5(5x6) Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs