onsemi · FETs & Power MOSFETs · MPN NVMFS016N10MCLT1G
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 460pF |
| Current - Continuous Drain(Id) | 46A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 32W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 20mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.25nF |
| Type | N-Channel |
100V 46A 3V 32W 20mΩ@4.5V 1 N-channel N-Channel DFN-5(5x6)(SO-8FL) Single FETs, MOSFETs RoHS