onsemi NVMFS005N10MCLT1G

onsemi · FETs & Power MOSFETs · MPN NVMFS005N10MCLT1G

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)18.4A;108A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.8W;131W
RDS(on)5.1mΩ
Number1 N-channel
Input Capacitance(Ciss)4.1nF

Technical details

N-Channel 100V 18.4A 108A 3.8W 131W Surface Mount SO-8FL

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