onsemi · FETs & Power MOSFETs · MPN NVMFD6H852NLT1G
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| Current - Continuous Drain(Id) | 25A |
|---|---|
| RDS(on) | 25.5mΩ@10V |
| Pd - Power Dissipation | 38W |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 80V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 521pF |
| Gate Charge(Qg) | 10nC@10V |
| Operating Temperature | -55℃~+175℃ |
N-Channel Array 80V 25A 38W Surface Mount DFN-8(4.9x5.9)