onsemi NVMFD6H846NLWFT1G

onsemi · FETs & Power MOSFETs · MPN NVMFD6H846NLWFT1G

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Specifications

Current - Continuous Drain(Id)31A
RDS(on)12.2mΩ@10V
Pd - Power Dissipation-
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage80V
Reverse Transfer Capacitance (Crss@Vds)7pF
Number2 N-Channel
Input Capacitance(Ciss)900pF
Gate Charge(Qg)8nC@4.5V
Operating Temperature-55℃~+175℃

Technical details

N-Channel Array 80V 31A Surface Mount DFN-8(4.9x5.9)

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