onsemi · FETs & Power MOSFETs · MPN NVMFD6H846NLT1G
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| Current - Continuous Drain(Id) | 31A |
|---|---|
| RDS(on) | 12.2mΩ@10V |
| Pd - Power Dissipation | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 80V |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 900pF |
| Gate Charge(Qg) | 8nC@4.5V |
| Operating Temperature | -55℃~+175℃ |
31A 12.2mΩ@10V 2V 1 N-channel PowerTDFN-8(5x6) FET, MOSFET Arrays RoHS