onsemi NVMFD6H840NLWFT1G

onsemi · FETs & Power MOSFETs · MPN NVMFD6H840NLWFT1G

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Specifications

Current - Continuous Drain(Id)14A;74A
RDS(on)5.7mΩ@10V
Pd - Power Dissipation-
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage80V
Reverse Transfer Capacitance (Crss@Vds)11pF
Number1 N-channel
Input Capacitance(Ciss)2.002nF
Gate Charge(Qg)32nC@10V
Operating Temperature-55℃~+175℃

Technical details

5.7mΩ@10V 2V 1 N-channel DFN-8(5x6) FET, MOSFET Arrays RoHS

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