onsemi NVMFD5C668NLT1G

onsemi · FETs & Power MOSFETs · MPN NVMFD5C668NLT1G

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Specifications

Current - Continuous Drain(Id)68A
RDS(on)6.5mΩ@10V
Pd - Power Dissipation57.5W
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)1.44nF
Gate Charge(Qg)21.3nC@10V
Operating Temperature-55℃~+175℃

Technical details

68A 6.5mΩ@10V 57.5W 2V 2 N-Channel DFN-8(5x6) FET, MOSFET Arrays RoHS

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